Copyright © Photo by Lancaster University
ULTRARAM™, one of the R&D&I projects from ATTRACT phase 2, is a computer memory that combines the performance of DRAM with the non-volatility of flash into a single memory concept without any of their disadvantages and will become a formal spinout company from Lancaster University.
The memory uses quantum mechanical resonant-tunnelling to provide an unmatched combination of speed, non-volatility, endurance and energy efficiency and will allow the devices of tomorrow to have improved performance, whilst consuming significantly less energy.
“The memory market is worth more than $100bn per year, so commercialisation of ULTRARAM™ is a fantastic opportunity for Europe, and success will enable huge energy-saving benefits that will help to mitigate the climate emergency,” explains Professor Manus Hayne, ULTRARAM™ project coordinator and senior academic at Lancaster University co-founding the spinout.
This technology has the potential to transform the entire digital technology landscape, from small autonomous Internet of Things (IoT) devices to smartphones, laptops and data centres. Recently, the ULTRARAM™ team secured an ICURe Exploit award following a ‘pitch’ in Glasgow which will support the spinout formation.
More information about the ULTRARAM™ project is available here.
Read the full story at the Lancaster University website here.
Copyright © Photo by Lancaster University ULTRARAM™, one of the R&D&I projects from ATTRACT phase 2, is a computer memory that combines the performance of DRAM with the non-volatility of flash into a single memory concept without any of their disadvantages and will become a formal spinout company from Lancaster University. The memory uses quantum […]
